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Ceramist > Volume 28(2); 2025 > Article
Ceramist 2025;28(2):271-280.
DOI: https://doi.org/10.31613/ceramist.2025.00192    Published online June 30, 2025.
Characterization of the Crystallization Behavior of NbCoSn Amorphous Alloy using APT and TEM
Chanwon Jung
Department of Materials Science and Engineering, Pukyong National University, 48513 Busan, Republic of Korea
APT와 TEM을 활용한 NbCoSn 비정질 합금의 결정화 거동 분석
정찬원
부경대학교 재료공학과
Correspondence:  Chanwon Jung,
Email: c.jung@pknu.ac.kr
Received: 8 May 2025   • Accepted: 27 May 2025
Abstract
Nanostructured materials are conventionally synthesized by mechanically alloying bulk ingots via ball milling, followed by consolidation through powder sintering. However, the conventional approach is limited in its ability to precisely control the microstructure. On the other hand, nanocrystallization from an amorphous precursor offers a more versatile and controllable route for engineering nanostructures. This approach enables precise modulation of crystallization kinetics and microstructural evolution through careful adjustment of annealing parameters such as temperature and time. Advanced characterization techniques, such as atom probe tomography (APT) and transmission electron microscopy (TEM), facilitate the elucidation of fundamental crystallization behavior in amorphous alloys. In the present study, we employed a correlative analytical methodology combining APT and TEM to investigate the nanoscale structural evolution of amorphous NbCoSn alloys during thermal annealing. APT provided three-dimensional, atomic-scale mapping of compositional distributions and elemental segregation, while TEM offered complementary insights into crystallographic structure, grain morphology, and segregation behavior. This integrated approach provides a comprehensive understanding of crystallization behavior and establishes a foundation for the rational design of high-performance materials via controlled nanocrystallization of amorphous precursors.
Key Words: Atom probe tomography, Correlative analysis, Crystallization, Half-Heusler compounds, Transmission electron microscopy
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