| Methodologies for Electrical Measurement and Parameter Analysis of 2D Semiconductor Transistors |
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Kyungwu Kwon1,2, Hyemyeong Lee1,3, Seunguk Song1,4 |
1Center for 2D Quantum Heterostructures (2DQH), Institute for Basic Science (IBS), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
2Department of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
3Department of Electronic and Electrical Engineering, Hongik University, Seoul, 04066, Republic of Korea
4Department of Energy Science, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea |
| 전계효과 2차원 트랜지스터의 전기적 측정 기법과 주요 파라미터 도출 |
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권경우1,2, 이혜명1,3, 송승욱1,4 |
1기초과학연구원 이차원양자헤테로구조체연구단
2성균관대학교 신소재공학부
3홍익대학교 전자전기공학부
4성균관대학교 에너지과학과 |
Correspondence:
Seunguk Song,
Email: seunguk@skku.edu
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Received: 28 April 2025 • Accepted: 27 May 2025 |
| Abstract |
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Conventional silicon-based semiconductors face short‑channel effects and drain‑induced barrier lowering as channel dimensions of the Field-effect transistors (FETs) approach their physical limits. Two‑dimensional (2D) van der Waals semiconductors, such as Transition metal chalcogenides (TMCs), offer atomic‑scale thickness, self‑passivated surfaces, and high carrier mobility, presenting a promising path beyond silicon scaling. However, chalcogen vacancies in TMCs, interface traps, unintended doping, and Schottky contacts introduce variability and high contact resistance, challenging device reliability. In addition, accurate evaluation of electrical characteristics is critical because it ensures reliable comparison of device performance, while guiding material and process optimization for commercialization of 2D semiconductor technologies. Here, we introduce three key electrical measurement techniques for 2D channel FETs; (i) four‑terminal method, (ii) Hall measurement, and (iii) Transfer length method (TLM). We also review the various extraction methods for sheet resistance, carrier concentration, field‑effect mobility, and contact resistivity, and highlights their error sources and best practices. Our guidelines therefore help to enable reliable parameter extraction, providing reference metrics to enhance the accuracy and reproducibility of 2D device characterizations. |
| Key Words:
Field effect mobility, Four terminal method, Hall measurement, Schottky barrier height, Transfer line method |
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